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1

Analysis of the latch and breakdown phenomena in N and P channel thin film SOI MOSFET's as a function of temperature

Balestra, F., Jomaah, J., Ghibaudo, G., Faynot, O., Auberton-Herve, A.J., Giffard, B.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 388 KB

english, 1994

2

[IEEE 1993 IEEE International SOI Conference - Palm Springs, CA, USA (5-7 Oct. 1993)] Proceedings of 1993 IEEE International SOI Conference - Comparison of hot-carrier degradation effects in inversion-mode and accumulation-mode fully depleted SOI MOSFETs

Faynot, O., Su, L.T., Cristoloveanu, S., Raynaud, C., Chung, J.E., Auberton-Herve, A.J., Antoniadis, D.A.

Year:

1993

Language:

english

File:

PDF, 166 KB

english, 1993

3

[IEEE 1998 IEEE International SOI Conference Proceedings - Stuart, FL, USA (5-8 Oct. 1998)] 1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199) - Gate oxide integrity testing on SOI wafers without test structure fabrication

Henaux, S., Mondon, F., Reimbold, G., Moriceau, H., Barge, T., Auberton-Herve, A.J.

Year:

1998

Language:

english

File:

PDF, 208 KB

english, 1998

4

[IEEE IEEE International SOI Conference - Ponte Vedra Beach, FL (October 6-8, 1992)] IEEE International SOI Conference - Experimental Analysis of the Film Thickness Influence on the Performance of Accumulation-Mode Simox Mosfet's

Faynot, O., Auberton-Herve, A.-J., Cristoloveanu, S.

Year:

1992

File:

PDF, 124 KB

1992

5

WHY CAN SMART CUT® CHANGE THE FUTURE OF MICROELECTRONICS?

AUBERTON-HERVÉ, A. J., BRUEL, MICHEL

Journal:

International Journal of High Speed Electronics and Systems

Year:

2000

Language:

english

File:

PDF, 3.13 MB

english, 2000

6

Silicon-on-insulator by oxygen implantation: An advanced technology

M. Bruel, J. Margail, C. Jaussaud, A.J. Auberton-Hervé, J. Stoemenos

Journal:

Microelectronic Engineering

Year:

1988

Language:

english

File:

PDF, 854 KB

english, 1988

7

Parasitic transients induced by floating substrate effect and bipolar transistor on SOI technologies

C. Leroux, J. Gautier, A.J. Auberton-Hervé, B. Giffard, M. Spalanzani

Journal:

Microelectronic Engineering

Year:

1991

Language:

english

File:

PDF, 681 KB

english, 1991

8

Hot carrier-induced degradation mechanisms in short-channel SIMOX p-MOSFET's

T. Ouisse, A.J. Auberton-Hervé, B. Giffard, G. Reimbold

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 261 KB

english, 1992

9

Investigation of the influence of the film thickness in accumulation-mode fully-depleted SIMOX MOSFET's

O. Faynot, A.J. Auberton-Hervé, S. Cristoloveanu

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 235 KB

english, 1992

10

Special SOI-based devices

A.J. Auberton-Hervé

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 581 KB

english, 1993

11

Hot-carrier degradation in ultra-thin fully-depleted accumulation-mode SIMOX n-MOSFET's

O. Faynot, S. Cristoloveanu, A.-J. Auberton-Hervé, G. Reimbold

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 322 KB

english, 1993

12

Buried oxide layers formed by low dose SIMOX processes

B. Aspar, C. Guilhalmenc, C. Pudda, A. Garcia, A.M. Papon, A.J. Auberton-Herve, J.M. Lamure

Journal:

Microelectronic Engineering

Year:

1995

Language:

english

File:

PDF, 391 KB

english, 1995

13

Basic mechanisms involved in the Smart-Cut® process

B. Aspar, M. Bruel, H. Moriceau, C. Maleville, T. Poumeyrol, A.M. Papon, A. Claverie, G. Benassayag, A.J. Auberton-Hervé, T. Barge

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 604 KB

english, 1997

14

Detailed characterization of Unibond material

D. Munteanu, C. Maleville, S. Cristoloveanu, H. Moriceau, B. Aspar, C. Raynaud, O. Faynot, J-L. Pelloie, A-J. Auberton-Hervé

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 298 KB

english, 1997

15

Charge trapping in SIMOX and UNIBOND® oxides

O. Gruber, P. Paillet, J.L. Autran, B. Aspar, A.J. Auberton-Hervé

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 293 KB

english, 1997

16

Wafer bonding and H-implantation mechanisms involved in the Smart-cut® technology

Christophe Maleville, B. Aspar, T. Poumeyrol, H. Moriceau, M. Bruel, A.J. Auberton-Hervè, T. Barge

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 553 KB

english, 1997

17

Characterization by atomic force microscopy of the SOI layer topography in low-dose SIMOX materials

C. Guilhalmenc, H. Moriceau, B. Aspar, A.J. Auberton-Hervé, J.M. Lamure

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 376 KB

english, 1997

18

High Volume RF/Microwave SOI-CMOS Integrated Circuits

A. J. Auberton-Herve, T. Barge, C. Maleville, A. Wittkower

Journal:

Analog Integrated Circuits and Signal Processing

Year:

2000

Language:

english

File:

PDF, 136 KB

english, 2000

19

Aging analysis of nMOS of a 1.3-μm partially depleted SIMOX SOI technology comparison with a 1.3-μm bulk technology

Reimbold, G., Auberton-Herve, A.-J.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 611 KB

english, 1993

20

Correlation of the leakage current and charge pumping in silicon on insulator gate-controlled diodes

Seghir, K., Cristoloveanu, S., Jerisian, R., Oualid, J., Auberton-Herve, A.-J.

Journal:

IEEE Transactions on Electron Devices

Year:

1993

Language:

english

File:

PDF, 828 KB

english, 1993

21

Performance and potential of ultrathin accumulation-mode SIMOX MOSFET's

Faynot, O., Cristoloveanu, S., Auberton-Herve, A.J., Raynaud, C.

Journal:

IEEE Transactions on Electron Devices

Year:

1995

Language:

english

File:

PDF, 696 KB

english, 1995

22

Performance and physical mechanisms in SIMOX MOS transistors operated at very low temperature

Elewa, T., Balestra, F., Cristoloveanu, S., Hafez, I.M., Colinge, J.-P., Auberton-Herve, A.-J., Davis, J.R.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 1.34 MB

english, 1990

23

From substrate to VLSI: investigation of hardened SIMOX without epitaxy, for dose, dose rate and SEU phenomena

Leray, J.L., Dupont-Nivet, E., Musseau, O., Coic, Y.M., Umbert, A., Lalande, P., Pere, J.F., Auberton-Herve, A.J., Bruel, M., Jaussaud, C., Margail, J., Giffard, B., Truche, R., Martin, F.

Journal:

IEEE Transactions on Nuclear Science

Year:

1988

Language:

english

File:

PDF, 546 KB

english, 1988

24

SIMOX — a new challenge for ion implantation

A. Auberton-Herve, A. Wittkower, B. Aspar

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1995

Language:

english

File:

PDF, 527 KB

english, 1995

25

[IEEE 1998 IEEE International SOI Conference Proceedings - Stuart, FL, USA (5-8 Oct. 1998)] 1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199) - Detailed characterization of Unibond/sup R/ structure buried oxide [SOI]

Maleville, C., Barge, T., Henaux, S., Auberton-Herve, A.J., Aspar, B., Moriceau, H.

Year:

1998

Language:

english

File:

PDF, 317 KB

english, 1998

26

Trapping-detrapping properties of irradiated ultra-thin SIMOX buried oxides

Paillet, P., Autran, J.-L., Leray, J.-L., Aspar, B., Auberton-Herve, A.J.

Journal:

IEEE Transactions on Nuclear Science

Year:

1995

Language:

english

File:

PDF, 647 KB

english, 1995

27

X-radiation response of SIMOX buried oxides: influence of the fabrication process

Paillet, P., Autran, J.L., Flament, O., Leray, J.L., Aspar, B., Auberton-Herve, A.J.

Journal:

IEEE Transactions on Nuclear Science

Year:

1996

Language:

english

File:

PDF, 510 KB

english, 1996

28

[IEEE 1998 IEEE International SOI Conference Proceedings - Stuart, FL, USA (5-8 Oct. 1998)] 1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199) - Radiation properties of UNIBOND/sup TM/ with 200 nm buried oxide [SOI wafers]

Liu, S.T., Jenkins, W., Hughes, H., Auberton-Herve, A.J.

Year:

1998

Language:

english

File:

PDF, 212 KB

english, 1998

29

CMOS/SOI hardening at 100 Mrad (SiO/sub 2/)

Leray, J.L., Dupont-Nivet, E., Pere, J.F., Coic, Y.M., Raffaelli, M., Auberton-Herve, A.J., Bruel, M., Giffard, B., Margail, J.

Journal:

IEEE Transactions on Nuclear Science

Year:

1990

Language:

english

File:

PDF, 562 KB

english, 1990

30

[IEEE 1990 IEEE SOS/SOI Technology Conference. - Key West, FL, USA (2-4 Oct. 1990)] 1990 IEEE SOS/SOI Technology Conference. Proceedings - Influence of LDD on aging of SOI NMOS transistors

Reimbold, G., Saint Bonnet, P., Giffard, B., Auberton-Herve, A.-J.

Year:

1990

Language:

english

File:

PDF, 155 KB

english, 1990

31

A latch phenomenon in buried N-body SOI NMOSFET's

Gautier, J., Auberton-Herve, A.-J.

Journal:

IEEE Electron Device Letters

Year:

1991

Language:

english

File:

PDF, 245 KB

english, 1991

32

[IEEE 1998 IEEE International SOI Conference Proceedings - Stuart, FL, USA (5-8 Oct. 1998)] 1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199) - Kinetics of splitting in the Smart-Cut/sup R/ process

Aspar, B., Lagahe, C., Moriceau, H., Soubie, A., Bruel, M., Auberton-Herve, A.J., Barge, T., Maleville, C.

Year:

1998

Language:

english

File:

PDF, 263 KB

english, 1998

33

[IEEE International Electron Devices Meeting. Technical Digest - San Francisco, CA, USA (8-11 Dec. 1996)] International Electron Devices Meeting. Technical Digest - SOI: materials to systems

Auberton-Herve, A.J.

Year:

1996

Language:

english

File:

PDF, 1.12 MB

english, 1996

34

[IEEE 1995 IEEE International SOI Conference - Tucson, AZ, USA (3-5 Oct. 1995)] 1995 IEEE International SOI Conference Proceedings - "Smart cut": a promising new SOI material technology

Bruel, M., Aspar, B., Charlet, B., Maleville, C., Poumeyrol, T., Soubie, A., Auberton-Herve, A.J., Lamure, J.M., Barge, T., Metral, F., Trucchi, S.

Year:

1995

Language:

english

File:

PDF, 378 KB

english, 1995

35

[IEEE Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. - Grenoble, France (12-16 Sept. 2005)] Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. - Engineering wafers for the nanotechnology era

Mazure, C., Auberton-Herve, J.

Year:

2005

Language:

english

File:

PDF, 625 KB

english, 2005

36

[IEEE 1996 IEEE International SOI Conference Proceedings - Sanibel Island, FL, USA (30 Sept.-3 Oct. 1996)] 1996 IEEE International SOI Conference Proceedings - Electrical properties of buried oxide layers of low dose SIMOX structures

Afanasev, V., Aspar, B., Auberton-Herve, A., Brown, G., Jenkins, W., Hughes, H., Revesz, A.

Year:

1996

Language:

english

File:

PDF, 208 KB

english, 1996

37

[IEEE 1995 IEEE International SOI Conference - Tucson, AZ, USA (3-5 Oct. 1995)] 1995 IEEE International SOI Conference Proceedings - Optical characterization of silicon-on-insulator

Li, G.G., Forouhi, A.R., Auberton-Herve, A., Wittkower, A.

Year:

1995

Language:

english

File:

PDF, 184 KB

english, 1995

38

[IEEE 1991 IEEE International SOI Conference - Vail Valley, CO, USA (1-3 Oct. 1991)] 1991 IEEE International SOI Conference Proceedings - Dynamic effects in SOI MOSFET's

Giffard, B., Auberton-Herve, A.J., Goutti, F.

Year:

1991

Language:

english

File:

PDF, 161 KB

english, 1991

39

[IEEE Third European Conference on Radiation and its Effects on Components and Systems - Arcachon, France (18-22 Sept. 1995)] Proceedings of the Third European Conference on Radiation and its Effects on Components and Systems - X-radiation response of SIMOX buried oxides: influence of the fabrication process

Paillet, P., Autran, J.L., Flament, O., Leray, J.L., Aspar, B., Auberton-Herve, A.J.

Year:

1996

Language:

english

File:

PDF, 483 KB

english, 1996

40

[IEEE 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005. - Grenoble, France (Sept. 12-16, 2005)] Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005. - Engineering wafers for the nanotechnology era

Mazurure, C., Auberton-Herve, J.

Year:

2005

Language:

english

File:

PDF, 614 KB

english, 2005

41

Physical characterization of electron trapping in Unibond(R) oxides

Gruber, O., Paillet, P., Marcandella, C., Aspar, B., Auberton-Herve, A.J.

Journal:

IEEE Transactions on Nuclear Science

Year:

1998

Language:

english

File:

PDF, 499 KB

english, 1998

42

[IEEE 1996 IEEE International SOI Conference Proceedings - Sanibel Island, FL, USA (30 Sept.-3 Oct. 1996)] 1996 IEEE International SOI Conference Proceedings - Cleaning and polishing as key steps for Smart-cut(R) SOI process

Moriceau, H., Maleville, C., Cartier, A.M., Aspar, B., Soubie, A., Bruel, M., Poumeyrol, T., Metral, F., Auberton-Herve, A.J.

Year:

1996

Language:

english

File:

PDF, 212 KB

english, 1996

43

[IEEE 1996 IEEE International SOI Conference Proceedings - Sanibel Island, FL, USA (30 Sept.-3 Oct. 1996)] 1996 IEEE International SOI Conference Proceedings - A novel pattern transfer process for bonded SOI giga-bit DRAMs

Lee, B.H., Bae, G.J., Lee, K.W., Cha, G., Kim, W.D., Lee, S.I., Barge, T., Auberton-Herve, A.J., Lamure, J.M.

Year:

1996

Language:

english

File:

PDF, 359 KB

english, 1996

44

Silicon-on-insulator material formed by oxygen implantation and high-temperature annealing: Carrier transport, oxygen activity, and interface properties

S. Cristoloveanu, S. Gardner, C. Jaussaud, J. Margail, A. J. Auberton-hervé, M. Bruel

Year:

1987

Language:

english

File:

PDF, 664 KB

english, 1987

45

[IEEE 1995 IEEE International SOI Conference - Tucson, AZ, USA (3-5 Oct. 1995)] 1995 IEEE International SOI Conference Proceedings - Single crystalline silicon thin film transistors fabricated on Corning 7059

Plais, F., Huet, O., Legagneux, P., Pribat, D., Auberton-Herve, A.J., Barge, T.

Year:

1995

Language:

english

File:

PDF, 299 KB

english, 1995

46

[IEEE . RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems - La Grande-Motte, France (9-12 Sept. 1991)] . RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems - High total dose effects on CMOS/SOI technology

Flament, O., Dupont-Nivet, E., Leray, J.L., Pere, J.F., Delagnes, E., Auberton-Herve, A.J., Giffard, B., Borel, G., Ouisse, T.

Year:

1992

Language:

english

File:

PDF, 367 KB

english, 1992

47

[IEEE IEEE SOS/SOI Technology Conference - Stateline, NV, USA (3-5 Oct. 1989)] IEEE SOS/SOI Technology Conference - Performances of a 16 K SRAM processed in a 150 nm SIMOX film for high speed applications

Auberton-Herve, A.J., Giffard, B., Bruel, M.

Year:

1989

Language:

english

File:

PDF, 137 KB

english, 1989

48

High total dose effects on CMOS/SOI technology

Flament, O., Dupont-Nivet, E., Leray, J.L., Pere, J.F., Delagnes, E., Auberton-Herve, A.J., Giffard, B., Borel, G., Ouisse, T.

Journal:

IEEE Transactions on Nuclear Science

Year:

1992

Language:

english

File:

PDF, 367 KB

english, 1992

49

[IEEE Proceedings. SOS/SOI Technology Workshop - St. Simons Island, GA, USA (3-5 Oct. 1988)] Proceedings. SOS/SOI Technology Workshop - Performance of SIMOX transistors at very low temperatures

Elewa, T., Balestra, F., Cristoloveanu, S., Auberton-Herve, A.J., Davis, J.

Year:

1988

Language:

english

File:

PDF, 95 KB

english, 1988

50

[IEEE 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition - San Francisco, CA, USA (15-17 Feb. 1999)] 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278) - SOI technology performance and modelling

Pelloie, J.L., Auberton-Herv, A.J., Raynaud, C., Faynot, O.

Year:

1999

Language:

english

File:

PDF, 387 KB

english, 1999

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